AC3416+Datasheet+V2+.pdf

AC3416 亚芯电子（深圳）有限公司 B E02B 20V /6.5A Single N Power MOSFET 6E02B E V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 20V /6.5A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC3416 SOT23-3 3416 3000 Parameter 20 V 19.0 mΩ 26.0 mΩ 6.5 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 10.4 IAR 2.1 EAR 4.8 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range 5.2 IDM G Repetitive avalanche energy L=0.1mH 6.5 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 55 82 °C/W 110 132 °C/W 33 52 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC3416 20V /6.5A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 20 V 1 5 uA ±100 nA 0.8 1.1 V VGS=-4.5V, ID=6.5A 19.0 22.0 VGS=2.5V, ID=6.5A 26.0 34.0 Forward Transconductance VDS=5V, ID=6.5A 93 Diode Forward Voltage IS=1A,VGS=28V 0.72 0.6 S 1 V 6.5 A Typ Max Units 1295 1579 pF 160 196 pF 87 103 pF 1.3 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.6 tD(on) Turn-On DelayTime 15.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 10 VGS=10V, VDS=15V, ID=6.5A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 5 1.82 12.4 43.4 nC ns 13.95 IF=-8A, dI/dt=500A/µs 31 ns IF=18A, dI/dt=500A/µs 6.8 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC3416 20V /6.5A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC3416 20V /6.5A Single N Power MOSFET Rev0：Oct 2018